Hardikar S. Transient Substrate Currents in Junction-Isolated Lateral IGBT [Електронний ресурс] / S. Hardikar, D. W. Green, E. M. S. Narayanan // IEEE Transactions on Electron Devices. – 2006. – № 6. – P. 1487–1490
- Електронна версія (pdf / 248 Kb)
Статистика використання: Завантажень: 2
Анотація:
In this brief, experimental results of transient substrate currents that occur during clamped inductive switching of a junctionisolated lateral insulated gate bipolar transistor are analyzed. The transient substrate current peak at turn off is broader and higher than the
value at turn on. The peak substrate current increases with increasing anode voltage, and anode injection efficiency significantly influences the characteristics of the transient currents. Two-dimensional numerical simulations are used to evaluate the internal dynamics of the device. It is shown that the Kirk effect is responsible for the transient currents during the switching of a lateral insulated gate bipolar transistor.
value at turn on. The peak substrate current increases with increasing anode voltage, and anode injection efficiency significantly influences the characteristics of the transient currents. Two-dimensional numerical simulations are used to evaluate the internal dynamics of the device. It is shown that the Kirk effect is responsible for the transient currents during the switching of a lateral insulated gate bipolar transistor.