Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, the authors focus on the model development of spiral inductors with symmetrical terminals, but the same approach can be applied readily to asymmetrical inductors. Relevant and important physics such as the current crowding in metal line, frequency-dependent permittivity in oxide, and overlap parasitics are accounted for. Experimental data and results calculated
from the existing inductor models are included in support of the model development.