Estimating Lateral Straggling of Boron Profiles Ion Implanted Into Crystalline Silicon With a Tilt Angle of 0 deg Using Off-Angle Substrates [Електронний ресурс] / K. Suzuki, K. Tanahashi, S. Nagayama и др. // IEEE Transactions on Electron Devices [Електронний ресурс]. – 2006. – № 5. – Pp. 1262–1265
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Статистика використання: Завантажень: 1
Анотація:
Boron was ion implanted into .. off-angle crystalline silicon substrates with a tilt angle of ... It is assumed that the B profiles along the ion-beam direction are identical, enabling the lateral straggling of B ion implanted with a tilt angle of 0. to be evaluated experimentally for the first time. Themeasurements show that the lateral straggling of channeling ions is small.