Depletion-Mode TFT Made of Low-Temperature Poly-Si [Електронний ресурс] / Yong Duck Son, Kyung Dong Yang, Byung Seong Bae и др. // IEEE Transactions on Electron Devices [Електронний ресурс]. – 2006. – № 5. – Pp. 1260–1262
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Статистика використання: Завантажень: 1
Анотація:
This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si TFT is normally ON-state, so that the current can flow from the source to the drain at zero gate voltage. The TFT exhibited a field-effect mobility of 60 cm2/V · s, a threshold voltage of 18 V, an on/of current ratio of 106, and a gate voltage swing of 1.1 V/dec.