Temperature Dependence of the Current Gain in Power 4H-SiC NPN BJTs [Електронний ресурс] / Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal и др. // IEEE Transactions on Electron Devices. – 2006. – № 5. – P. 1245–1249
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Статистика використання: Завантажень: 1
Анотація:
For 1-kV 30-A 4H-SiC epitaxial emitter n-p-n bipolar junction transistors, the dependences of the common–emitter current gain Вce on the collector current IC were measured at elevated temperatures. The collector–emitter voltage was fixed (at 100 V) to provide an active operation mode at all collector currents varying in a wide range from 150 mA to 40 A (current densities of 24–6350 A/cm2).