Kondo M. et al. Strained-Silicon MOSFETs for Analog Applications: Utilizing a Supercritical-Thickness Strained Layer for Low Leakage Current and High Breakdown Voltage [Електронний ресурс] / M. et al. Kondo // IEEE Transactions on Electron Devices. – 2006. – № 5. – P. 1226–1234
- Електронна версія (pdf / 432 Kb)
Статистика використання: Завантажень: 1
Анотація:
Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth
profile and strained-silicon-layer thickness significantly improved transconductance, ON resistance, and leakage current. Breakdown voltage of strained-silicon MOSFETs was the same as silicon MOSFETs even at elevated temperatures. RF/analog performances, such as cutoff frequency and 1/f noise, were improved by this technology while keeping high-driving-voltage capability.
profile and strained-silicon-layer thickness significantly improved transconductance, ON resistance, and leakage current. Breakdown voltage of strained-silicon MOSFETs was the same as silicon MOSFETs even at elevated temperatures. RF/analog performances, such as cutoff frequency and 1/f noise, were improved by this technology while keeping high-driving-voltage capability.
Тема:
- Ключові слова латиницею
- CMOS
- Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET
- Complementary Metal-Oxide Semiconductor, CMOS Ключові слова
- комплементарна логіка на транзисторах метал-окид-напівпровідник, КМОН, комплементарная логика на транзисторах металл-оксид-полупроводник,КМОП, CMOS-technology