van Dal Mark J. H. et al. Effect of SIIS on work function of self-aligned pTsI fusi metal-gated capacitors [Електронний ресурс] / Dal Mark J. H. et al. van // IEEE Transactions on Electron Devices. – 2006. – № 5. – P. 1180–1185
- Електронна версія (pdf / 225 Kb)
Статистика використання: Завантажень: 1
Анотація:
A novel self-aligned fully silicided (FUSI) gate process for the integration of platinum monosilicide (PtSi) as a metal gate for pMOS applications is presented. It is shown that
during Pt silicidation at elevated temperatures in oxygen ambient, a thin continuous SiO2 film grows along the Pt-silicide outer surface that effectively protects the FUSI structures during the selective metal wet etch. PtSi FUSI MOS capacitors were fabricated with the new process and electrically characterized.
during Pt silicidation at elevated temperatures in oxygen ambient, a thin continuous SiO2 film grows along the Pt-silicide outer surface that effectively protects the FUSI structures during the selective metal wet etch. PtSi FUSI MOS capacitors were fabricated with the new process and electrically characterized.