Lu Wei-Yuan. On the Scaling Limit of Ultrathin SOI MOSFETs [Електронний ресурс] / Wei-Yuan Lu, Yuan Taur // IEEE Transactions on Electron Devices. – 2006. – № 5. – P. 1137–1141
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Статистика використання: Завантажень: 1
Анотація:
In this paper, a detailed study on the scaling limit of ultrathin silicon-on-insulator (SOI) MOSFETs is presented. Due to the penetration of lateral source/drain fields into standard
thick buried oxide, the scale-length theory does not apply to thin SOI MOSFETs.
thick buried oxide, the scale-length theory does not apply to thin SOI MOSFETs.