High-Mobility Ultrathin Strained Ge MOSFETs on Bulk and SOI With Low Band-to-Band Tunneling Leakage: Experiments [Електронний ресурс] / Tejas Krishnamohan, Zoran Krivokapic, Ken Uchida и др. // IEEE Transactions on Electron Devices. – 2006. – № 5. – P. 990–999
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Статистика використання: Завантажень: 1
Анотація:
For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band tunneling (BTBT) leakage have been investigated. In particular, through detailed experiments and simulations, the transport and leakage in ultrathin (UT) strained germanium (Ge) MOSFETs on bulk and silicon-on-insulator (SOI) have been examined.