IEEE Transactions on Electron Devices. Special issue on nonclassical sI cmos devices and technologies: extending the roadmap. Contents [Електронний ресурс] // IEEE Transactions on Electron Devices [Електронний ресурс]. – 2006. – № 5
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About the Cover: A novel silicon CMOS structure has been demonstrated on a hybrid orientation substrate through wafer bonding and silicon epitaxy. CMOS performance is greatly increased because of carrier mobility improvement resulting from surface orientation and channel direction optimization. For more information, see the paper, ‘Hybrid-Orientation Technology (HOT): Opportunities and Challenges (Invited Paper)’’ by Yang al., beginning et on page 965.